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      Band-Bending at buried SiO2/Si interface as probed by XPS

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      Author
      Çopuroğlu, M.
      Sezen, H.
      Opila, R. L.
      Süzer, Şefik
      Date
      2013
      Source Title
      ACS Applied Materials and Interfaces
      Print ISSN
      1944-8244
      Electronic ISSN
      1944-8252
      Publisher
      American Chemical Society
      Volume
      5
      Issue
      12
      Pages
      5875 - 5881
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      X-ray photoelectron spectroscopy is used to probe the photoinduced shifts in the binding energies of Si2p, O1s, and C1s of the SiO2/Si interfaces of a number of samples having oxide and/or thin organic layers on top of p- and n-Si wafers. Whereas the photoinduced shifts, in each and every peak related, vary from 0.2 to 0.5 eV for the p-type samples, the corresponding shifts are substantially smaller (<0.1 eV) for the n-type, regardless of (i) oxidation route (thermal or anodic), (ii) thickness of oxide layer, (iii) nature of organic layer, or (iv) color of three illuminating sources we have used. This leads us to conclude that these particular photoshifts reflect the charge state of the SiO2/Si interface, even in the case of a 20 nm thick oxide, where the interface is buried and cannot be probed directly by XPS.
      Keywords
      Band-bending
      Buried interface
      Doping
      Photovoltage
      XPS
      Permalink
      http://hdl.handle.net/11693/20920
      Published Version (Please cite this version)
      http://dx.doi.org/10.1021/am401696e
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