A PN-type quantum barrier for InGaN/GaN light emitting diodes
Author
Zhang, Z.-H.
Tan, S.T.
Ji, Y.
Liu W.
Ju, Z.
Kyaw, Z.
Sun X.W.
Demir, Hilmi Volkan
Date
2013Source Title
Optics Express
Print ISSN
10944087
Publisher
Optical Society of American (OSA)
Volume
21
Issue
13
Pages
15676 - 15685
Language
English
Type
ArticleItem Usage Stats
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Abstract
In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the quantum confined Stark effect (QCSE) in the quantum wells and improved hole transport across the active region. In addition, the enhanced overall radiative recombination rates in the multiple quantum wells and increased effective energy barrier height in the conduction band has substantially suppressed the electron leakage from the active region. Furthermore, the electrical conductivity in the proposed devices is improved. The numerical and experimental results are in excellent agreement and indicate that the PN-type quantum barriers hold great promise for high-performance InGaN/GaN LEDs. © 2013 Optical Society of America.
Keywords
Semiconductor quantum wellsEffective energy
Electrical conductivity
Electron leakage
Ingan/gan lightemitting diodes (LEDs)
Optical output power
Quantum-confined Stark effect
Radiative recombination rate
Strong enhancement
Light emitting diodes