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      A PN-type quantum barrier for InGaN/GaN light emitting diodes

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      Author
      Zhang, Z.-H.
      Tan, S.T.
      Ji, Y.
      Liu W.
      Ju, Z.
      Kyaw, Z.
      Sun X.W.
      Demir, Hilmi Volkan
      Date
      2013
      Source Title
      Optics Express
      Print ISSN
      10944087
      Publisher
      Optical Society of American (OSA)
      Volume
      21
      Issue
      13
      Pages
      15676 - 15685
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the quantum confined Stark effect (QCSE) in the quantum wells and improved hole transport across the active region. In addition, the enhanced overall radiative recombination rates in the multiple quantum wells and increased effective energy barrier height in the conduction band has substantially suppressed the electron leakage from the active region. Furthermore, the electrical conductivity in the proposed devices is improved. The numerical and experimental results are in excellent agreement and indicate that the PN-type quantum barriers hold great promise for high-performance InGaN/GaN LEDs. © 2013 Optical Society of America.
      Keywords
      Semiconductor quantum wells
      Effective energy
      Electrical conductivity
      Electron leakage
      Ingan/gan lightemitting diodes (LEDs)
      Optical output power
      Quantum-confined Stark effect
      Radiative recombination rate
      Strong enhancement
      Light emitting diodes
      Permalink
      http://hdl.handle.net/11693/20918
      Published Version (Please cite this version)
      http://dx.doi.org/10.1364/OE.21.015676
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
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