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      Metal-insulator transition induced by random dipoles

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      Author
      Larcher, M.
      Menotti, C.
      Tanatar, Bilal
      Vignolo, P.
      Date
      2013
      Source Title
      Physical Review A
      Print ISSN
      2469-9926
      Electronic ISSN
      2469-9934
      Publisher
      American Physical Society
      Volume
      88
      Issue
      1
      Pages
      013632-1 - 013632-8
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We study the localization properties of a test dipole feeling the disordered potential induced by dipolar impurities trapped at random positions in an optical lattice. This random potential is marked by correlations which are a convolution of short-range and long-range ones. We show that when short-range correlations are dominant, extended states can appear in the spectrum. Introducing long-range correlations, the extended states, if any, are wiped out and localization is restored over the whole spectrum. Moreover, long-range correlations can either increase or decrease the localization length at the center of the band, which indicates a richer behavior than previously predicted.
      Keywords
      Localization length
      Localization properties
      Long range correlations
      Random position
      Random potentials
      Short-range correlations
      Mathematical models
      Physics
      Semiconductor insulator boundaries
      Permalink
      http://hdl.handle.net/11693/20888
      Published Version (Please cite this version)
      http://dx.doi.org/10.1103/PhysRevA.88.013632
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