Metal-insulator transition induced by random dipoles
Author
Larcher, M.
Menotti, C.
Tanatar, Bilal
Vignolo, P.
Date
2013Source Title
Physical Review A
Print ISSN
2469-9926
Electronic ISSN
2469-9934
Publisher
American Physical Society
Volume
88
Issue
1
Pages
013632-1 - 013632-8
Language
English
Type
ArticleItem Usage Stats
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Abstract
We study the localization properties of a test dipole feeling the disordered potential induced by dipolar impurities trapped at random positions in an optical lattice. This random potential is marked by correlations which are a convolution of short-range and long-range ones. We show that when short-range correlations are dominant, extended states can appear in the spectrum. Introducing long-range correlations, the extended states, if any, are wiped out and localization is restored over the whole spectrum. Moreover, long-range correlations can either increase or decrease the localization length at the center of the band, which indicates a richer behavior than previously predicted.
Keywords
Localization lengthLocalization properties
Long range correlations
Random position
Random potentials
Short-range correlations
Mathematical models
Physics
Semiconductor insulator boundaries