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dc.contributor.authorYu, H. -Y.en_US
dc.contributor.authorBattal, E.en_US
dc.contributor.authorOkyay, A., K.en_US
dc.contributor.authorShim, J.en_US
dc.contributor.authorPark J. -H.en_US
dc.contributor.authorBaek, J. W.en_US
dc.contributor.authorSaraswat, K. C.en_US
dc.date.accessioned2016-02-08T09:36:54Z
dc.date.available2016-02-08T09:36:54Z
dc.date.issued2013en_US
dc.identifier.issn1567-1739
dc.identifier.urihttp://hdl.handle.net/11693/20871
dc.description.abstractWe investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.en_US
dc.language.isoEnglishen_US
dc.source.titleCurrent Applied Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.cap.2013.02.021en_US
dc.subjectActivation energyen_US
dc.subjectDiffusivityen_US
dc.subjectGermaniumen_US
dc.subjectIn-situen_US
dc.subjectPhosphorusen_US
dc.subjectGermaniums (Ge)en_US
dc.subjectIn-situen_US
dc.subjectIn-situ dopingen_US
dc.subjectIn-situ processen_US
dc.subjectPreexponential factoren_US
dc.subjectShallow junctionen_US
dc.subjectSpreading resistance profilingen_US
dc.subjectTheoretical investigationsen_US
dc.subjectActivation energyen_US
dc.subjectDiffusionen_US
dc.subjectEpitaxial growthen_US
dc.subjectGrowth kineticsen_US
dc.subjectPhosphorusen_US
dc.subjectSemiconductor dopingen_US
dc.subjectGermaniumen_US
dc.titleExperimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layersen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage1060en_US
dc.citation.epage1063en_US
dc.citation.volumeNumber13en_US
dc.citation.issueNumber6en_US
dc.identifier.doi10.1016/j.cap.2013.02.021en_US
dc.publisherElsevieren_US


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