Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers
Author
Yu, H. -Y.
Battal, E.
Okyay, Ali Kemal
Shim, J.
Park J. -H.
Baek, J. W.
Saraswat, K. C.
Date
2013Source Title
Current Applied Physics
Print ISSN
1567-1739
Publisher
Elsevier
Volume
13
Issue
6
Pages
1060 - 1063
Language
English
Type
ArticleItem Usage Stats
129
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Abstract
We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.
Keywords
Activation energyDiffusivity
Germanium
In-situ
Phosphorus
Germaniums (Ge)
In-situ
In-situ doping
In-situ process
Preexponential factor
Shallow junction
Spreading resistance profiling
Theoretical investigations
Activation energy
Diffusion
Epitaxial growth
Growth kinetics
Phosphorus
Semiconductor doping
Germanium
Permalink
http://hdl.handle.net/11693/20871Published Version (Please cite this version)
http://dx.doi.org/10.1016/j.cap.2013.02.021Collections
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