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      Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

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      Author
      Yu, H. -Y.
      Battal, E.
      Okyay, Ali Kemal
      Shim, J.
      Park J. -H.
      Baek, J. W.
      Saraswat, K. C.
      Date
      2013
      Source Title
      Current Applied Physics
      Print ISSN
      1567-1739
      Publisher
      Elsevier
      Volume
      13
      Issue
      6
      Pages
      1060 - 1063
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.
      Keywords
      Activation energy
      Diffusivity
      Germanium
      In-situ
      Phosphorus
      Germaniums (Ge)
      In-situ
      In-situ doping
      In-situ process
      Preexponential factor
      Shallow junction
      Spreading resistance profiling
      Theoretical investigations
      Activation energy
      Diffusion
      Epitaxial growth
      Growth kinetics
      Phosphorus
      Semiconductor doping
      Germanium
      Permalink
      http://hdl.handle.net/11693/20871
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.cap.2013.02.021
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      • Department of Electrical and Electronics Engineering 3524
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