Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers
Please cite this item using this persistent URL
http://hdl.handle.net/11693/20871Journal
Current Applied Physics
Published as
http://dx.doi.org/10.1016/j.cap.2013.02.021Collections
- Research Paper [6026]
Abstract
We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices. © 2013 Elsevier B.V. All rights reserved.
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