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      • Department of Electrical and Electronics Engineering
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      Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

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      Author(s)
      El-Atab, N.
      Alqatari, S.
      Oruc F.B.
      Souier, T.
      Chiesa, M.
      Okyay, Ali Kemal
      Nayfeh, A.
      Date
      2013
      Source Title
      AIP Advances
      Print ISSN
      2158-3226
      Publisher
      AIP Publishing
      Volume
      3
      Issue
      10
      Language
      English
      Type
      Article
      Item Usage Stats
      145
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      92
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      Abstract
      A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively. © 2013 © 2013 Author(s).
      Keywords
      Conductive AFM
      Heterojunction diodes
      Low temperatures
      On/off ratio
      P-type silicon
      Rectification properties
      Reverse bias
      Turn-on voltages
      Atomic force microscopy
      Diodes
      Electric fields
      Heterojunctions
      Semiconductor diodes
      Zinc oxide
      Atomic layer deposition
      Permalink
      http://hdl.handle.net/11693/20801
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4826583
      Collections
      • Department of Electrical and Electronics Engineering 3702
      • Institute of Materials Science and Nanotechnology (UNAM) 1930
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