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      Laser induced sponge-like Si in Si-rich oxides for photovoltaics

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      Author
      Gundogdu, S.
      Sungur Ozen, E.
      Hübner, R.
      Heinig, K.H.
      Aydınlı, Atilla
      Date
      2013
      Source Title
      Optics Express
      Print ISSN
      10944087
      Publisher
      Optical Society of American (OSA)
      Volume
      21
      Issue
      20
      Pages
      24368 - 24374
      Language
      English
      Type
      Article
      Item Usage Stats
      137
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      111
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      Abstract
      We show that a sponge-like structure of interconnected Si nanowires embedded in a dielectric matrix can be obtained by laser annealing of silicon rich oxides (SRO). Due to quantum confinement, the large bandgap displayed by these percolated nanostructures can be utilized as a tandem stage in 3rd generation thin-film solar cells. Well passivated by the SiO2 dielectric matrix, they are expected to overcome the difficulty of carrier separation encountered in the case of isolated crystalline quantum dots. In this study PECVD grown SRO were irradiated by a cw Ar+ laser. Raman spectroscopy has been used to assess the crystallinity of the Si nanostructures and thus to optimize the annealing conditions as dwell times and power densities. In addition, Si plasmon imaging in the transmission electron microscope was applied to identify the sponge-like structure of phase-separated silicon. © 2013 Optical Society of America.
      Keywords
      Argon lasers
      Nanowires
      Silicon oxides
      Transmission electron microscopy
      Annealing condition
      Carrier separation
      Dielectric matrixes
      Laser annealing
      Si nanostructures
      Silicon rich oxides
      Spongelike structure
      Thin-film solar cells
      Silicon
      Permalink
      http://hdl.handle.net/11693/20767
      Published Version (Please cite this version)
      http://dx.doi.org/10.1364/OE.21.024368
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      • Department of Physics 2299
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