Fabrication and characterization of Bismuth Hall sensors at room temperature
Author
Bayer, Gözde
Advisor
Oral, Ahmet
Date
2003Publisher
Bilkent University
Language
English
Type
ThesisItem Usage Stats
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Abstract
Small-scale Hall effect devices have attracted a great deal of research interest in
recent years. It is well known that bulk single crystal of bismuth exhibit a large
magnetoresistance effect and the recognition of this fact has stimulated a number of
recent efforts to grow thin films of bismuth. Such films are useful in magnetic sensing
applications.
We fabricated Hall sensors having thickness of 30 nm and 50 nm of Bismuth
using photolithography. Bismuth was deposited on to the surface of GaAs by evaporation
teclinique. The properties of these sensors were then studied; dependences of the
resistivity, and Hall coefficient on layer thickness were investigated at room temperature.
Hall coefficients were calculated under the effect of a magnetic field. Results were then
compared with the previously obtained values.
Bismuth micro-Hall probes with dimensions as small as »0.25 pm x 0.25 pm
produced by Focused Ion Beam (FIB) milling were also presented in this study. Hall
coefficient was then calculated.