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dc.contributor.advisorOzbay, Ekmelen_US
dc.contributor.authorKimukin, İbrahimen_US
dc.date.accessioned2016-01-08T20:16:39Z
dc.date.available2016-01-08T20:16:39Z
dc.date.issued1999
dc.identifier.urihttp://hdl.handle.net/11693/18147
dc.descriptionAnkara : The Department of Physics and the Institute of Engineering and Science of Bilkent Univ. , 1999.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 1999.en_US
dc.descriptionIncludes bibliographical references leaves 68-62en_US
dc.description.abstractThe increasing rate of telecommunication alters both science and technology, and demands high performance components. Photo detectors are essential components of optoelectronic integrated circuits and fiber optic communication systems. A new family of photodetectors offer high performance along with wavelength selectivity: resonant cavity enhanced (RCE) photodetectors. In this thesis, we present our efforts for design, fabrication and characterization of GaAs/AIGaAs based Schottky photodetectors operating within the first (850 nm) and second (1300 nm) optical communication windows. Epitaxial wafers are designed using transfer matrix method based simulation and are grown with molecular beam epitaxy. The photodetector operating at 840 nm was designed with indium tin oxide (IT O ) Schottky layer for high quantum efficiency. The second photodetector is based on internal photoemission, and is compatible with advanced GaAs process technology. Our aim with this design is high speed operation at the second optical communication window. We measured 20 GHz 3-dB bandwidth with 60% quantum efficiency at 840 nm. We expect 50 GHz 3-dB bandwidth with 0.05% quantum efficiency at 1310 nmen_US
dc.description.statementofresponsibilityKimukin, İbrahimen_US
dc.format.extent62 leaves, illustrationsen_US
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectResonant Cavityen_US
dc.subjectResonant Cavity Enhancementen_US
dc.subjectSchottky photodetectoren_US
dc.subjectInternal Photoemissionen_US
dc.subjectHigh Speeden_US
dc.subjectHigh Quantum Efficiencyen_US
dc.subjectBandwidth-Efficiency Producten_US
dc.subject.lccTK8300 .K56 1999en_US
dc.subject.lcshOptoelectronic devices.en_US
dc.titleLong wavelength GaAs based hot electron photoemission detectorsen_US
dc.typeThesisen_US
dc.departmentDepartment of Physicsen_US
dc.publisherBilkent Universityen_US
dc.description.degreeM.S.en_US


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