Long wavelength GaAs based hot electron photoemission detectors
Author
Kimukin, İbrahim
Advisor
Ozbay, Ekmel
Date
1999Publisher
Bilkent University
Language
English
Type
ThesisItem Usage Stats
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Abstract
The increasing rate of telecommunication alters both science and technology, and
demands high performance components. Photo detectors are essential components
of optoelectronic integrated circuits and fiber optic communication systems. A new
family of photodetectors offer high performance along with wavelength selectivity:
resonant cavity enhanced (RCE) photodetectors.
In this thesis, we present our efforts for design, fabrication and characterization
of GaAs/AIGaAs based Schottky photodetectors operating within the first (850 nm)
and second (1300 nm) optical communication windows. Epitaxial wafers are designed
using transfer matrix method based simulation and are grown with molecular beam
epitaxy. The photodetector operating at 840 nm was designed with indium tin oxide
(IT O ) Schottky layer for high quantum efficiency. The second photodetector is based
on internal photoemission, and is compatible with advanced GaAs process technology.
Our aim with this design is high speed operation at the second optical communication
window. We measured 20 GHz 3-dB bandwidth with 60% quantum efficiency at 840
nm. We expect 50 GHz 3-dB bandwidth with 0.05% quantum efficiency at 1310 nm
Keywords
Resonant CavityResonant Cavity Enhancement
Schottky photodetector
Internal Photoemission
High Speed
High Quantum Efficiency
Bandwidth-Efficiency Product