Fabrication and characterization of high speed resonant cavity enhanced Schottky photodiodes
Author
Islam, M. Saiful
Advisor
Özbay, Ekmel
Date
1996Publisher
Bilkent University
Language
English
Type
ThesisItem Usage Stats
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Abstract
High speed, high external quantum efficiency and narrow spectral linewidth make
resonant cavity enhanced (RC E) Schottky photodetector a good candidate for
telecommunication applications. In this thesis, we present our work for the design,
fabrication and characterization of a RCE Schottky photodiode with high quantum
efficiency and high speed. We present experimental results on a RCE photodiode
having an operating wavelength of 900 nm. The absorption takes place in a thin
InGaAs layer placed inside the GaAs cavity. The active region was grown above a highreflectivity
GaAs/AIAs quarter-wavelength Bragg reflector. The top mirror consisted
of a 200A thin Au layer which also acted as Schottky metal of the device. An external
quantum efficiency of 55% was obtained from our devices. We demonstrate that the
spectral response can be tailored by etching the top surface of the microcavity. Our
high speed measurements yielded a FW HM of 30 ps, which is the record response for
any RCE Schottky photodiode ever reported.
Keywords
High SpeedResonant Cavity
Photodetector
Schottky Diode
High Quantum Efficiency
Fabry-Perot Cavity
Resonant Detector
Schottky Diode Detector
Enhancement