Design and characterization of resonant cavity enhanced Schottky photodiodes
Author
Gökkavas, Mutlu
Advisor
Aytür, Orhan
Date
1996Publisher
Bilkent University
Language
English
Type
ThesisItem Usage Stats
83
views
views
35
downloads
downloads
Abstract
Recently, novel photodetectors which employ a multiple-pass detection scheme
to increase the efficiency-bandwidth product have been developed. In this thesis.
we present our work on .\iAs/GaAs resonant cavity enhanced (RCE) Schottky
photodiodes w'ith an InGaAs absorber. Quantum efficiency enhancement
is acconiplished by placing the InGaAs absorber inside a Fabry-Perot microcavity
whose mirrors are formed b}' the Au Schottky layer cind an rVlAs/GaAs
quarter wave stcick (QWS) reflector. In the design and analysis of the structures,
scattering (S) matrices are used. Reflectivity, transmissivity, quantum
efficiency, and the loss in the Schottky metal are calculated, a.nd it is shown
that, it is ¡possible to diminish the front-surface reflectivity using a Si:iN.| dielectric
coating to optimize the quantum efficiency. High speed and spectral
efficiency/ measurements on fabricated photodiodes are also presented.