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dc.contributor.advisorEllialtıoğlu, Recai
dc.contributor.authorAta, Erhan Polatkan
dc.date.accessioned2016-01-08T20:11:33Z
dc.date.available2016-01-08T20:11:33Z
dc.date.issued1994
dc.identifier.urihttp://hdl.handle.net/11693/17576
dc.descriptionAnkara : The Department of Physics and the Institute of Engineering and Science of Bilkent University, 1994.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 1994.en_US
dc.descriptionIncludes bibliographical references leaves 77-81.en_US
dc.description.abstractMetal Semiconductor Field Effect Transistor (MESFET) is the most widely used active element of today’s microwave industry. After development of the MESFET technology, the microwave industry gained a high acceleration, especially in the telecommunication field. In this study, GaAs MESFETs with various dimesions and geometries were fabricated. Characterization and parameter extraction of these devices were performed, by means of low and high frequency measurements. The low cutoff frequency of the MESFETs produced were attributed to the non-optimized gate recess etch.en_US
dc.description.statementofresponsibilityAta, Erhan Polatkanen_US
dc.format.extentvii, 81 leavesen_US
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectMESFETen_US
dc.subjectGaAsen_US
dc.subjectSchottky Contacten_US
dc.subjectOhmic Contacten_US
dc.subjectactive channelen_US
dc.subjectanalytical modelen_US
dc.subjectsmall-signal modelen_US
dc.subject.lccTK7871.15.G3 A83 1994en_US
dc.subject.lcshGallium arsenide semiconductors.en_US
dc.subject.lcshMetal semiconductor field effect transistors.en_US
dc.titleFabrication, characterization, and extraction of GaAs mesfetsen_US
dc.typeThesisen_US
dc.departmentDepartment of Physicsen_US
dc.publisherBilkent Universityen_US
dc.description.degreeM.S.en_US


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