Al(x)Ga(1-x)As/GaAs graded index separate confinement heterostructure single quantum well lasers
Author(s)
Advisor
Aydınlı, AtillaDate
1994Publisher
Bilkent University
Language
English
Type
ThesisItem Usage Stats
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Abstract
"Stimulated emission of photons could be produced in semiconductors by
recombination of carriers injected across a p-n junction
This idea was first suggested by Basov et al} in 1961. Soon afterwards diode
lasers were first demonstrated at cryogenic temperatures in pulsed operation
in 1962 by separate groups in US.^"® Until the first use of heterostructures in
diode lasers^ in 1969, advances in the diode laser area were not as good as was
expected. New era of the diode Icisers begin with use of the heterostructures
in laser diode technology which allowed them to run at room temperatures in
continuous wave operations. Also, introduction of MBE and LPE techniques
in crystal growth area supplied the forecoming materials and enabled growing
of nanocrystal layers for semiconductor laser diode applications. Reaching to
reliable, compact and an efficient components for applications is the major factor
which forces the laser diode designs to maturity.
In this work, ridge type Single Quantum Well Graded Index Separately
Confined Heterostructure lгıser diodes which were made by reactive ion etching
in CCI2F2 and lift-off of low temperature PECVD SİO2, is taken from its crystal
growth aspects through design and fabrication steps to its characterization.
Keywords
Laser diodesingle quantum well
graded-index
Gallium Arsenide
plasma enhanced chemical vapor deposition (PECVD)