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      Electronic structure of Si/Ge semiconductor superlattices

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      Author
      Gülseren, Oğuz
      Advisor
      Çıracı, Salim
      Date
      1988
      Publisher
      Bilkent University
      Language
      English
      Type
      Thesis
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      Please cite this item using this persistent URL
      http://hdl.handle.net/11693/17202
      Abstract
      A brief review about the two dimensional electron systems and especially band offsets is given. The electronic properties of the Si„/Ge„(001) strained superlattices as a function of the superlattice periodicity and the band misfit is investigated by using the empirical tight-binding method. The difference between the direct and indirect band gaps is reduced from 2.01 eV for bulk Si to 0.01 eV for n = 6. Consequently, the superlattice with n = 6 can be considered as quasi-direct, while it is at least 0.15 eV for n = 4 case. For the cases n=5,6, and 8, the band gap might become direct for large values of band misfit.
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      • Dept. of Physics - Master's degree 150

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