Show simple item record

dc.contributor.advisorSüzer, Şefik
dc.contributor.authorSezen, Hikmet
dc.date.accessioned2016-01-08T19:56:35Z
dc.date.available2016-01-08T19:56:35Z
dc.date.issued2011
dc.identifier.urihttp://hdl.handle.net/11693/16692
dc.descriptionAnkara : The Department of Chemistry and the Institute of Engineering and Science of Bilkent Univ., 2011.en_US
dc.descriptionThesis (Ph. D.) -- Bilkent University, 2011.en_US
dc.descriptionIncludes bibliographical references leaves 90-104.en_US
dc.description.abstractThe main motivation of this Ph.D. study is investigation of the photoinduced voltage changes in semiconductive materials with X-ray Photoelectron Spectroscopy (XPS). For this purpose, we have developed a technique for recording the shifts in the positions of the XPS peaks in response to different waveforms of electrical and/or optical stimuli for tracing dynamics of the developed potentials originating from intrinsic or extrinsic factors of the semiconductive materials such as charging/discharging, photoconductivity, surface photovoltage, band-bending/flattening/inversion, etc. Within this purpose, the surface photovoltage behaviors of n- and p-type doped Si and GaN samples are examined with the photo-dynamic XPS, to follow the behavior of the bandbending under photoillumination in both static and dynamic fashions. The band inversion effects are clearly observed on the n- and p-Si samples in the presence of a dielectric silica overlayer and on the p-GaN sample due to variation of the illuminating laser energies Moreover, the extent of the dopant dependent XPS peak shifts of the n- and p-Si samples are assessed after correction of their surface photovoltage values. A laser patterned silicon wafer with a high-power near infrared fiber laser is also investigated. While the patterned silica domains have identical chemical composition with the non-patterned regions, an investigation with dynamic XPS clearly reveals distinct dielectric characteristics of the patterned domains. Electrical parameters of CdS thin film are extracted by dynamic XPS with and without photoillumination. The photo-dynamic XPS technique has also provided useful information by disentanglement of processes; charging/discharging, photoconductivity, and surface photovoltage. Furthermore, location (space) dependent resistance and chemical profile of a CdS based Light Dependent Resistor (LDR) is also probed during realistic operational conditions, by utilizing spatially resolved XPS analysis (in the area mapping mode). In addition, with the XPS mapping analysis defects and malfunctioning sites/domains have been located under various experimental and preparation conditions.en_US
dc.description.statementofresponsibilitySezen, Hikmeten_US
dc.format.extentxviii, 104 leaves, illustrationsen_US
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectXPSen_US
dc.subjectDynamic XPSen_US
dc.subjectPhoto-Dynamic XPSen_US
dc.subjectChargingen_US
dc.subjectDischargingen_US
dc.subjectCharge Contrasten_US
dc.subjectPhotoconductivityen_US
dc.subjectSurface Photovoltageen_US
dc.subjectBand-Bendingen_US
dc.subjectBand-Flatteningen_US
dc.subjectBand-Inversionen_US
dc.subjectLaser Patterningen_US
dc.subjectLight Dependent Photoresistoren_US
dc.subject.lccQD96.P5 S49 2011en_US
dc.subject.lcshPhotoelectron spectroscopy.en_US
dc.subject.lcshX-Ray spectroscopy.en_US
dc.titlePhoto-dynamic XPS for investigating photoinduced voltage changes in semiconducting materialsen_US
dc.typeThesisen_US
dc.departmentDepartment of Chemistryen_US
dc.publisherBilkent Universityen_US
dc.description.degreePh.D.en_US
dc.identifier.itemidB131808


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record