Show simple item record

dc.contributor.advisorKocabaş, Coşkun
dc.contributor.authorPinçe, Erçağ
dc.date.accessioned2016-01-08T18:12:59Z
dc.date.available2016-01-08T18:12:59Z
dc.date.issued2010
dc.identifier.urihttp://hdl.handle.net/11693/15080
dc.descriptionAnkara : The Department of Physics and the Institute of Engineering and Sciences of Bilkent University, 2010.en_US
dc.descriptionIncludes bibliographical references leaves 61-66.en_US
dc.description.abstractRecent advances in chemical vapor deposition of graphene on large area substrates stimulate a significant research effort in order to search for new applications of graphene in the field of unusual electronics such as macroelectronics. The primary aim of this work is to use single layer of graphene for applications of high frequency electronics. This thesis consists of both theoretical and experimental studies of graphene transistors for the use of radio frequency electronics. We have grown graphene layer using chemical vapor deposition technique on large area copper substrates. The grown graphene layers are then transferred onto dielectric substrates for the fabrication of graphene transistors. The theoretical part of the thesis is focused on the understanding the performance limits of the graphene transistor for high frequency operation. We investigate the intrinsic high frequency performance of graphene field effect transistors using a self consistent transport model. The self-consistent transport model is based on a nonuniversal diffusive transport that is governed by the charged impurity scattering. The output and transfer characteristics of graphene field effect transistors are characterized as a function of impurity concentration and dielectric constant of the gate insulator. These experimental and theoretical studies shape the basis of our research on the graphene based radio frequency electronics.en_US
dc.description.statementofresponsibilityPinçe, Erçağen_US
dc.format.extentxiii, 66 leaves, illustrations, graphsen_US
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectGrapheneen_US
dc.subjectRFen_US
dc.subjectHigh Frequency Electronicsen_US
dc.subjectCVDen_US
dc.subject.lccTA418.9.N35 P55 2010en_US
dc.subject.lcshNanostructured materials.en_US
dc.subject.lcshGraphene.en_US
dc.subject.lcshGraphite.en_US
dc.subject.lcshChemical vapor deposition.en_US
dc.titleGraphene based high frequency electronicsen_US
dc.typeThesisen_US
dc.departmentDepartment of Physicsen_US
dc.publisherBilkent Universityen_US
dc.description.degreeM.S.en_US
dc.identifier.itemidB122713


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record