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      Nitrogen incorporation and optical studies of GaAsSbN∕GaAs single quantum well heterostructures

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      Author(s)
      Nunna, K.
      Iyer, S.
      Wu, L.
      Li, J.
      Bharatan, S.
      Wei, X.
      Senger, R. T.
      Bajaj, K. K.
      Date
      2007
      Source Title
      Journal of Applied Physics
      Print ISSN
      0021-8979
      Electronic ISSN
      1089-7550
      Publisher
      A I P Publishing LLC
      Volume
      102
      Issue
      5
      Pages
      053106-1 - 053106-8
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      In this work, the effects of N incorporation on the optical properties of GaAsSbN/GaAs single quantum wells (SQWs) have been investigated using temperature, excitation, and magnetic dependencies of photoluminescence (PL) characteristics. These layers were grown in an elemental solid source molecular beam epitaxy system with a rf plasma N source. The N concentrations in the range of 0.5%-2.5% were investigated in this study. The SQW with N similar to 0.5% exhibits a behavior similar to that in an intermediate regime where the contributions from the localized states in the band gap are dominant. The temperature and excitation dependencies of the PL characteristics indicate that for the N concentration of 0.9% and above, the alloy behavior is analogous to that of a regular alloy and the changes in optical properties are only marginal. The conduction band effective mass (m(eff)) values computed from the magnetophotoluminescence spectra using a variational formalism and the band anticrossing model are in good agreement and indicate enhanced values of m(eff). However, there is no significant variation in m(eff) values of QWs for N >= 0.9%. Small redshift of about 30-50 meV for the temperature variations from 10 to 300 K in conjunction with unusually small blueshift observed in the excitation dependence of PL for N >= 0.9% indicate that this system holds a great promise for laser applications at 1.55 mu m and beyond.
      Keywords
      Molecular-beam Epitaxy
      Mbe Growth
      Gaas
      Photoluminescence
      Temperature
      Alloys
      Gainnassb
      Emission
      Permalink
      http://hdl.handle.net/11693/13562
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.2777448
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      • Department of Physics 2397
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