Nanometer-scale patterning and individual current-controlled lithography using multiple scanning probes
Author
Wilder, K.
Soh, H. T.
Atalar, Abdullah
Quate, C. F.
Date
1999-06Source Title
Review of Scientific Instruments
Print ISSN
0034-6748
Electronic ISSN
1089-7623
Publisher
A I P Publishing LLC
Volume
70
Issue
6
Pages
2822 - 2827
Language
English
Type
ArticleItem Usage Stats
113
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Abstract
Scanning probe lithography (SPL) is capable of sub-30-nm-patterning resolution and
nanometer-scale alignment registration, suggesting it might provide a solution to the semiconductor
industry’s lithography challenges. However, SPL throughput is significantly lower than
conventional lithography techniques. Low throughput most limits the widespread use of SPL for
high resolution patterning applications. This article addresses the speed constraints for reliable
patterning of organic resists. Electrons field emitted from a sharp probe tip are used to expose the
resist. Finite tip-sample capacitance limits the bandwidth of current-controlled lithography in which
the tip-sample voltage bias is varied to maintain a fixed emission current during exposure. We have
introduced a capacitance compensation scheme to ensure continuous resist exposure of SAL601
polymer resist at scan speeds up to 1 mm/s. We also demonstrate parallel resist exposure with two
tips, where the emission current from each tip is individually controlled. Simultaneous patterning
with multiple tips may make SPL a viable technology for high resolution lithography.