• About
  • Policies
  • What is openaccess
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Engineering
      • Department of Electrical and Electronics Engineering
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Engineering
      • Department of Electrical and Electronics Engineering
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Nanometer-scale patterning and individual current-controlled lithography using multiple scanning probes

      Thumbnail
      View / Download
      1.2 Mb
      Author
      Wilder, K.
      Soh, H. T.
      Atalar, Abdullah
      Quate, C. F.
      Date
      1999-06
      Source Title
      Review of Scientific Instruments
      Print ISSN
      0034-6748
      Electronic ISSN
      1089-7623
      Publisher
      A I P Publishing LLC
      Volume
      70
      Issue
      6
      Pages
      2822 - 2827
      Language
      English
      Type
      Article
      Item Usage Stats
      113
      views
      114
      downloads
      Abstract
      Scanning probe lithography (SPL) is capable of sub-30-nm-patterning resolution and nanometer-scale alignment registration, suggesting it might provide a solution to the semiconductor industry’s lithography challenges. However, SPL throughput is significantly lower than conventional lithography techniques. Low throughput most limits the widespread use of SPL for high resolution patterning applications. This article addresses the speed constraints for reliable patterning of organic resists. Electrons field emitted from a sharp probe tip are used to expose the resist. Finite tip-sample capacitance limits the bandwidth of current-controlled lithography in which the tip-sample voltage bias is varied to maintain a fixed emission current during exposure. We have introduced a capacitance compensation scheme to ensure continuous resist exposure of SAL601 polymer resist at scan speeds up to 1 mm/s. We also demonstrate parallel resist exposure with two tips, where the emission current from each tip is individually controlled. Simultaneous patterning with multiple tips may make SPL a viable technology for high resolution lithography.
      Keywords
      Atomic-force microscopy
      Tunneling microscope
      Operation
      Resist
      Permalink
      http://hdl.handle.net/11693/13504
      Published Version (Please cite this version)
      https://doi.org/10.1063/1.1149802
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      Show full item record

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartments

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 1771
      Copyright © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy