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dc.contributor.authorTut, T.en_US
dc.contributor.authorButun, S.en_US
dc.contributor.authorButun, B.en_US
dc.contributor.authorGokkavas, M.en_US
dc.contributor.authorYu, H. B.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T12:06:17Z
dc.date.available2015-07-28T12:06:17Z
dc.date.issued2005en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/13424
dc.description.abstractWe report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1-xN/GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 mu m diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11 A/W at 254 nm, and a NEP of 1.89x10(-16) W/Hz(1/2).en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.2135952en_US
dc.subjectLow dark currenten_US
dc.subjectAlganen_US
dc.subjectPhotodetectorsen_US
dc.titleSolar-blind AlxGa1-xN-based avalanche photodiodesen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.citation.spage223502-3en_US
dc.citation.epage223502-1en_US
dc.citation.volumeNumber87en_US
dc.citation.issueNumber22en_US
dc.identifier.doi10.1063/1.2135952en_US
dc.publisherAmerican Institute of Physicsen_US
dc.contributor.bilkentauthorÖzbay, Ekmel


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