Solar-blind AlxGa1-xN-based avalanche photodiodes
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Date
2005Journal Title
Applied Physics Letters
ISSN
0003-6951
Publisher
American Institute of Physics
Volume
87
Issue
22
Pages
223502 - 223502
Language
English
Type
Article
Metadata
Show full item recordCitation
Tut, T., Butun, S., Butun, B., Gokkavas, M., Yu, H., & Ozbay, E. (2005). Solar-blind AlxGa1-xN-based avalanche photodiodes. Applied Physics Letters, 87(22), 223502-223502.
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http://hdl.handle.net/11693/13424Abstract
We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1-xN/GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 mu m diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11 A/W at 254 nm, and a NEP of 1.89x10(-16) W/Hz(1/2). (c) 2005 American Institute of Physics.