Solar-blind AlxGa1-xN-based avalanche photodiodes
Author
Tut, T.
Butun, S.
Butun, B.
Gokkavas, M.
Yu, H. B.
Özbay, Ekmel
Date
2005Source Title
Applied Physics Letters
Print ISSN
0003-6951
Publisher
American Institute of Physics
Volume
87
Issue
22
Pages
223502-3 - 223502-1
Language
English
Type
ArticleItem Usage Stats
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Abstract
We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1-xN/GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 mu m diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11 A/W at 254 nm, and a NEP of 1.89x10(-16) W/Hz(1/2).