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      Solar-blind AlxGa1-xN-based avalanche photodiodes

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      Author
      Tut, T.
      Butun, S.
      Butun, B.
      Gokkavas, M.
      Yu, H. B.
      Özbay, Ekmel
      Date
      2005
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      American Institute of Physics
      Volume
      87
      Issue
      22
      Pages
      223502-3 - 223502-1
      Language
      English
      Type
      Article
      Item Usage Stats
      135
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      Abstract
      We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1-xN/GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 mu m diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11 A/W at 254 nm, and a NEP of 1.89x10(-16) W/Hz(1/2).
      Keywords
      Low dark current
      Algan
      Photodetectors
      Permalink
      http://hdl.handle.net/11693/13424
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.2135952
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      • Nanotechnology Research Center (NANOTAM) 1006
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