Electronic transport characterization of AlGaN∕GaN heterostructures using quantitative mobility spectrum analysis
Lisesivdin, S. B.
Applied Physics Letters
0003-6951 (print)1077-3118 (online)
AIP Publishing LLC
MetadataShow full item record
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/13408
Resistivity and Hall effect measurements in nominally undoped Al0.25Ga0.75N/GaN heterostructures grown on sapphire substrate by metal-organic chemical vapor deposition are carried out as a function of temperature (20-350 K) and magnetic field (0-1.5 T). The measurement results are analyzed using the quantitative mobility spectrum analysis techniques. It is found that there is strong two-dimensional electron gas localization below 100 K, while the thermally activated minority carriers with the activation energies of similar to 58 and similar to 218 meV contribute to the electron transport at high temperatures.