Crystallization of Ge in SiO2 matrix by femtosecond laser processing
Yaglioglu, H. G.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/13185
Journal of Vacuum Science and Technology B
- Department of Physics 
American Vacuum Society
Germanium nanocrystals embedded in a siliconoxide matrix has been fabricated by single femtosecond laser pulse irradiation of germanium doped SiO2 thin films deposited with plasma enhanced chemical vapor deposition. SEM and AFM are used to analyze surface modification induced by laser irradiation. Crystallization of Ge in the oxide matrix is monitored with the optic phonon at 300 cm(-1) as a function of laser fluence. Both the position the linewidth of the phonon provides clear signature for crystallization of Ge. In PL experiments, strong luminescence around 600 nm has been observed. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3677829]
Salihoglu, O., Kürüm, U., Yaglioglu, H. G., Elmali, A., & Aydinli, A. (2012). Crystallization of Ge in SiO2 matrix by femtosecond laser processing. Journal of Vacuum Science & Technology B, 30(1), 011807.