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      N structure for type-II superlattice photodetectors

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      Author
      Salihoglu, O.
      Muti, A.
      Kutluer, K.
      Tansel, T.
      Turan, R.
      Ergun, Y.
      Aydınlı, Atilla
      Date
      2012-08-14
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      American Institute of Physics
      Volume
      101
      Issue
      7
      Pages
      073505-1 - 073505-4
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption by manipulating electron and hole wavefunctions that are spatially separated in T2SLs, increasing the absorption while decreasing the dark current. In order to engineer the wavefunctions, we introduce a thin AlSb layer between InAs and GaSb layers in the growth direction which also acts as a unipolar electron barrier. Unlike the symmetrical insertion of AlSb into GaSb layers, N design aims to exploit the shifting of the electron and hole wavefunctions under reverse bias. With cutoff wavelength of 4.3 mu m at 77 K, temperature dependent dark current and detectivity measurements show that the dark current density is 3.6 x 10(-9) A/cm(2), under zero bias. Photodetector reaches background limited infrared photodetection (BLIP) condition at 125 K with the BLIP detectivity (D-BLIP*) of 2.6 x 10(10) Jones under 300 K background and -0.3 V bias voltage.
      Keywords
      Inas/gasb Superlattices
      Photodiodes
      Permalink
      http://hdl.handle.net/11693/13014
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4745841
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      • Department of Physics 2299
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