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dc.contributor.authorSuzer, S.en_US
dc.date.accessioned2015-07-28T12:04:13Z
dc.date.available2015-07-28T12:04:13Z
dc.date.issued2012en_US
dc.identifier.issn1759-9660
dc.identifier.urihttp://hdl.handle.net/11693/12995
dc.description.abstractX-ray photoelectron spectroscopy (XPS) is utilized to investigate a Si-diode during its operation under both forward and reverse bias. The technique traces chemical and location specified surface potential variations as shifts of the peak positions with respect to the magnitude as well as the polarity of the applied voltage bias, which enables one to separate the dopant dependent shifts from those of the chemical ones.en_US
dc.language.isoEnglishen_US
dc.source.titleAnalytical Methodsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1039/c2ay25901jen_US
dc.subjectRay Photoelectron-spectroscopyen_US
dc.subjectCdse Nanoparticle Filmsen_US
dc.subjectOperando Raman-gcen_US
dc.subjectP-n-junctionsen_US
dc.subjectCatalysten_US
dc.subjectOxidationen_US
dc.subjectMonolayeren_US
dc.subjectSubstrateen_US
dc.titleXPS investigation of a Si-diode in operationen_US
dc.typeArticleen_US
dc.departmentDepartment of Chemistryen_US
dc.citation.spage3527en_US
dc.citation.epage3530en_US
dc.citation.volumeNumber4en_US
dc.citation.issueNumber11en_US
dc.identifier.doi10.1039/c2ay25901jen_US
dc.publisherRoyal Society of Chemistryen_US
dc.identifier.eissn1759-9679


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