XPS investigation of a Si-diode in operation
Author(s)
Date
2012Source Title
Analytical Methods
Print ISSN
1759-9660
Electronic ISSN
1759-9679
Publisher
Royal Society of Chemistry
Volume
4
Issue
11
Pages
3527 - 3530
Language
English
Type
ArticleItem Usage Stats
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Abstract
X-ray photoelectron spectroscopy (XPS) is utilized to investigate a Si-diode during its operation under both forward and reverse bias. The technique traces chemical and location specified surface potential variations as shifts of the peak positions with respect to the magnitude as well as the polarity of the applied voltage bias, which enables one to separate the dopant dependent shifts from those of the chemical ones.
Keywords
Ray Photoelectron-spectroscopyCdse Nanoparticle Films
Operando Raman-gc
P-n-junctions
Catalyst
Oxidation
Monolayer
Substrate