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      XPS investigation of a Si-diode in operation

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      Author(s)
      Süzer, Şefik
      Date
      2012
      Source Title
      Analytical Methods
      Print ISSN
      1759-9660
      Electronic ISSN
      1759-9679
      Publisher
      Royal Society of Chemistry
      Volume
      4
      Issue
      11
      Pages
      3527 - 3530
      Language
      English
      Type
      Article
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      Abstract
      X-ray photoelectron spectroscopy (XPS) is utilized to investigate a Si-diode during its operation under both forward and reverse bias. The technique traces chemical and location specified surface potential variations as shifts of the peak positions with respect to the magnitude as well as the polarity of the applied voltage bias, which enables one to separate the dopant dependent shifts from those of the chemical ones.
      Keywords
      Ray Photoelectron-spectroscopy
      Cdse Nanoparticle Films
      Operando Raman-gc
      P-n-junctions
      Catalyst
      Oxidation
      Monolayer
      Substrate
      Permalink
      http://hdl.handle.net/11693/12995
      Published Version (Please cite this version)
      http://dx.doi.org/10.1039/c2ay25901j
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      • Department of Chemistry 640
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