• About
  • Policies
  • What is openaccess
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Transition metal oxides on organic semiconductors

      Thumbnail
      View / Download
      1.3 Mb
      Author
      Zhao Y.
      Zhang, J.
      Liu, S.
      Gao, Y.
      Yang, X.
      Leck K.S.
      Abiyasa, A. P.
      Divayana, Y.
      Mutlugun, E.
      Tan S.T.
      Xiong, Q.
      Demir, Hilmi Volkan
      Sun, X. W.
      Date
      2014-04
      Source Title
      Organic Electronics: materials, physics, chemistry and applications
      Print ISSN
      1566-1199
      Publisher
      Elsevier BV
      Volume
      15
      Issue
      4
      Pages
      871 - 877
      Language
      English
      Type
      Article
      Item Usage Stats
      147
      views
      123
      downloads
      Abstract
      Transition metal oxides (TMOs) on organic semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including inverted organic light-emitting diodes (OLEDs) and inverted organic solar cells (OSCs), which can improve the stability of such devices as a result of improved protection of air sensitive cathode. However, most of these reports are focused on the anode modification effect of TMO and the nature of TMO-on-OS is not fully understood. Here we show that the OS on TMO forms a two-layer structure, where the interface mixing is minimized, while for TMO-on-OS, due to the obvious diffusion of TMO into the OS, a doping-layer structure is formed. This is evidenced by a series of optical and electrical studies. By studying the TMO diffusion depth in different OS, we found that this process is governed by the thermal property of the OS. The TMO tends to diffuse deeper into the OS with a lower evaporation temperature. It is shown that the TMO can diffuse more than 20 nm into the OS, depending on the thermal property of the OS. We also show that the TMO-on-OS structure can replace the commonly used OS with TMO doping structure, which is a big step toward in simplifying the fabrication process of the organic optoelectronic devices. (C) 2014 Elsevier B.V. All rights reserved.
      Keywords
      Transition metal oxide
      Organic semiconductor
      Diffusion
      Organic light-emitting diode
      P-doping
      Permalink
      http://hdl.handle.net/11693/12832
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.orgel.2014.01.011
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      Show full item record

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartments

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 1771
      Copyright © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy