• About
  • Policies
  • What is openaccess
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes

      Thumbnail
      View / Download
      1.1 Mb
      Author
      Kyaw, Z.
      Zhang, Z. H.
      Liu, W.
      Tan, S. T.
      Ju, Z. G.
      Zhang, X. L.
      Ji, Y.
      Hasanov, N.
      Zhu, B.
      Lu, S.
      Zhang, Y.
      Sun, X. W.
      Demir, Hilmi Volkan
      Date
      2014-01-07
      Source Title
      Optics Express
      Print ISSN
      1094-4087
      Publisher
      Optical Society of America
      Volume
      22
      Issue
      1
      Pages
      809 - 816
      Language
      English
      Type
      Article
      Item Usage Stats
      151
      views
      115
      downloads
      Abstract
      N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n-GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device. (C) 2014 Optical Society of America
      Keywords
      Current-spreading Layer
      P-type Gan
      Efficiency Droop
      Ohmic Contacts
      Algan
      Growth
      Permalink
      http://hdl.handle.net/11693/12826
      Published Version (Please cite this version)
      http://dx.doi.org/10.1364/OE.22.000809
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      Show full item record

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartments

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 1771
      Copyright © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy