On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
Author
Kyaw, Z.
Zhang, Z. H.
Liu, W.
Tan, S. T.
Ju, Z. G.
Zhang, X. L.
Ji, Y.
Hasanov, N.
Zhu, B.
Lu, S.
Zhang, Y.
Sun, X. W.
Demir, Hilmi Volkan
Date
2014-01-07Source Title
Optics Express
Print ISSN
1094-4087
Publisher
Optical Society of America
Volume
22
Issue
1
Pages
809 - 816
Language
English
Type
ArticleItem Usage Stats
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Abstract
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n-GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device. (C) 2014 Optical Society of America