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dc.contributor.authorZhang Z.-H.en_US
dc.contributor.authorLi, W.en_US
dc.contributor.authorJu, Z.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorJi Y.en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorZhang X.en_US
dc.contributor.authorWang, L.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T12:03:15Z
dc.date.available2015-07-28T12:03:15Z
dc.date.issued2014en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/12816
dc.description.abstractInGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that the QCSE is self-screened by the polarization induced bulk charges enabled by designing quantum barriers. The InN composition of the InGaN quantum barrier graded along the growth orientation opportunely generates the polarization induced bulk charges in the quantum barrier, which well compensate the polarization induced interface charges, thus avoiding the electric field in the quantum wells. Consequently, the optical output power and the external quantum efficiency are substantially improved for the LEDs. The ability to self-screen the QCSE using polarization induced bulk charges opens up new possibilities for device engineering of III-nitrides not only in LEDs but also in other optoelectronic devices.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4883894en_US
dc.subjectLight-emitting-diodesen_US
dc.subjectHeterostructuresen_US
dc.titleSelf-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriersen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.citation.spage243501-1en_US
dc.citation.epage243501-5en_US
dc.citation.volumeNumber104en_US
dc.citation.issueNumber24en_US
dc.identifier.doi10.1063/1.4883894en_US
dc.publisherAIP Publishingen_US
dc.contributor.bilkentauthorDemir, Hilmi Volkan
dc.identifier.eissn1077-3118
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112Xen_US


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