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      Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

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      Author(s)
      Kyaw, Z.
      Zhang Z.-H.
      Liu W.
      Tan S.T.
      Ju, Z. G.
      Zhang, X. L.
      Ji Y.
      Hasanov N.
      Zhu B.
      Lu S.
      Zhang, Y.
      Teng, J. H.
      Wei, S. X.
      Demir, Hilmi Volkan
      Date
      2014-04-24
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Electronic ISSN
      1077-3118
      Publisher
      AIP Publishing
      Volume
      104
      Issue
      16
      Pages
      161113 - 161113
      Language
      English
      Type
      Article
      Item Usage Stats
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      263
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      Abstract
      A three-step graded undoped-InGaN layers embedded between the GaN last quantum barrier layer and the p-AlGaN electron blocking layer was proposed and its effect on the performance of InGaN/GaN light-emitting diodes was investigated both experimentally and theoretically. In the proposed structure, the electron leakage is found to be effectively reduced, while the hole injection efficiency is simultaneously increased significantly, hence enabling a greatly enhanced radiative recombination rate within the active region. As a result, improvements of 12.25% in the optical output power and 11.98% in the external quantum efficiency are obtained from the proposed device with the respect to the reference device.
      Keywords
      Efficiency proop
      Spontaneous polarization
      High-power
      Algan
      Layer
      Permalink
      http://hdl.handle.net/11693/12815
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4873395
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
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