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      Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2-2) semipolar versus (0001) polar planes

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      Author(s)
      Ji Y.
      Liu W.
      Erdem, T.
      Chen R.
      Tan S.T.
      Zhang Z.-H.
      Ju, Z.
      Zhang X.
      Sun, H.
      Sun, X. W.
      Zhao Y.
      DenBaars, S. P.
      Nakamura, S.
      Demir, Hilmi Volkan
      Date
      2014
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Electronic ISSN
      1077-3118
      Publisher
      AIP Publishing
      Volume
      104
      Issue
      14
      Pages
      143506-1 - 143506-5
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (11 (2) over bar2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.
      Keywords
      Electric Fields
      Electroluminescence
      Polarization
      Semiconductor Quantum Wells
      Comparative Studies
      Gan Light-emitting Diodes
      Internal Electric Fields
      Photoluminescence Emission
      Radiative Recombination Rate
      Stable Emissions
      Time-resolved Pl Spectra
      Light Emitting Diodes
      Carrier Dynamics
      Permalink
      http://hdl.handle.net/11693/12814
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4870840
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
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