Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2-2) semipolar versus (0001) polar planes
Author(s)
Date
2014Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
1077-3118
Publisher
AIP Publishing
Volume
104
Issue
14
Pages
143506-1 - 143506-5
Language
English
Type
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Abstract
The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (11 (2) over bar2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.
Keywords
Electric FieldsElectroluminescence
Polarization
Semiconductor Quantum Wells
Comparative Studies
Gan Light-emitting Diodes
Internal Electric Fields
Photoluminescence Emission
Radiative Recombination Rate
Stable Emissions
Time-resolved Pl Spectra
Light Emitting Diodes
Carrier Dynamics