• About
  • Policies
  • What is open access
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Engineering
      • Department of Electrical and Electronics Engineering
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Engineering
      • Department of Electrical and Electronics Engineering
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

      Thumbnail
      View / Download
      1.4 Mb
      Author(s)
      Zhang Z.-H.
      Ji Y.
      Liu W.
      Tan S.T.
      Kyaw, Z.
      Ju, Z.
      Zhang X.
      Hasanov N.
      Lu S.
      Zhang, Y.
      Zhu B.
      Sun, X. W.
      Demir, Hilmi Volkan
      Date
      2014
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      AIP Publishing
      Volume
      104
      Issue
      7
      Pages
      073511-1 - 073511-5
      Language
      English
      Type
      Article
      Item Usage Stats
      207
      views
      296
      downloads
      Abstract
      In this work, the origin of electron blocking effect of n-type Al 0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes. © 2014 AIP Publishing LLC.
      Keywords
      Electric Fields
      Light Emitting Diodes
      Semiconductor Quantum Wells
      Permalink
      http://hdl.handle.net/11693/12813
      Published Version (Please cite this version)
      http://dx.doi.org/ 10.1063/1.4866041
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
      Show full item record

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsCoursesThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsCourses

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 2976
      © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy