On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer
Zhang, Z. H.
Tan, S. T.
Sun, X. W.
Demir, H. V.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/12813
Applied Physics Letters
Published ashttp://dx.doi.org/ 10.1063/1.4866041
In this work, the origin of electron blocking effect of n-type Al 0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes. © 2014 AIP Publishing LLC.
Zhang, Z. H., Ji, Y., Liu, W., Tan, S. T., Kyaw, Z., Ju, Z., ... & Zhu, B. (2014). On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer. Applied Physics Letters, 104(7), 073511.