On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer
Author(s)
Date
2014Source Title
Applied Physics Letters
Print ISSN
0003-6951
Publisher
AIP Publishing
Volume
104
Issue
7
Pages
073511-1 - 073511-5
Language
English
Type
ArticleItem Usage Stats
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Abstract
In this work, the origin of electron blocking effect of n-type Al 0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes. © 2014 AIP Publishing LLC.