On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer
Zhang, Z. H.
Tan, S. T.
Sun, X. W.
Demir, H. V.
Applied Physics Letters
Zhang, Z. H., Ji, Y., Liu, W., Tan, S. T., Kyaw, Z., Ju, Z., ... & Zhu, B. (2014). On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer. Applied Physics Letters, 104(7), 073511.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/12813
In this work, the origin of electron blocking effect of n-type Al 0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes. © 2014 AIP Publishing LLC.