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      Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

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      Author(s)
      Ju, Z. G.
      Liu W.
      Zhang Z.-H.
      Tan S.T.
      Ji Y.
      Kyaw, Z.
      Zhang, X. L.
      Lu, S. P.
      Zhang, Y. P.
      Zhu B.
      Hasanov N.
      Sun, X. W.
      Demir, Hilmi Volkan
      Date
      2014-03-21
      Source Title
      ACS Photonics
      Print ISSN
      2330-4022
      Publisher
      American Chemical Society
      Volume
      1
      Issue
      4
      Pages
      377 - 381
      Language
      English
      Type
      Article
      Item Usage Stats
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      324
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      Abstract
      InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a metal− organic chemical-vapor deposition (MOCVD) system. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer, not only leads to an improved hole injection but also reduces the electron leakage, thus enhancing the radiative recombination rates across the active region. Consequently, the light output power was enhanced by 10% for the QWEBL LED at a current density of 35 A/cm2. The efficiency droop of the optimized device was reduced to 16%. This is much smaller than that of the conventional p-AlGaN electron blocking layer LED, which is 31%.
      Keywords
      Gan
      Led
      Qw
      Ebl
      Mocvd
      Permalink
      http://hdl.handle.net/11693/12810
      Published Version (Please cite this version)
      http://dx.doi.org/10.1021/ph500001e
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
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