Effect of post-deposition annealing on the electrical properties of B-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
Ozgit Akgun, C.
Journal of Vacuum Science and Technology A
American Vacuum Society
41504 - 41504
MetadataShow full item record
Altuntas, H., Donmez, I., Ozgit-Akgun, C., & Biyikli, N. (2014). Effect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition. Journal of Vacuum Science & Technology A, 32(4), 041504.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/12790
Ga2O3 dielectric thin films were deposited on (111)-oriented p-type silicon wafers by plasma-enhanced atomic layer deposition using trimethylgallium and oxygen plasma. Structural analysis of the Ga 2O3 thin films was carried out using grazing-incidence x-ray diffraction. As-deposited films were amorphous. Upon postdeposition annealing at 700, 800, and 900°C for 30min under N2 ambient, films crystallized into β-form monoclinic structure. Electrical properties of the β-Ga2O3 thin films were then investigated by fabricating and characterizing Al/β-Ga2O3/p-Si metal-oxide-semiconductor capacitors. The effect of postdeposition annealing on the leakage current densities, leakage current conduction mechanisms, dielectric constants, flat-band voltages, reverse breakdown voltages, threshold voltages, and effective oxide charges of the capacitors were presented. The effective oxide charges (Qeff) were calculated from the capacitance-voltage (C-V) curves using the flat-band voltage shift and were found as 2.6×1012, 1.9×1012, and 2.5×10 12 cm-2 for samples annealed at 700, 800, and 900°C, respectively. Effective dielectric constants of the films decreased with increasing annealing temperature. This situation was attributed to the formation of an interfacial SiO2 layer during annealing process. Leakage mechanisms in the regions where current increases gradually with voltage were well fitted by the Schottky emission model for films annealed at 700 and 900°C, and by the Frenkel-Poole emission model for film annealed at 800°C. Leakage current density was found to improve with annealing temperature. β-Ga2O3 thin film annealed at 800°C exhibited the highest reverse breakdown field value. © 2014 American Vacuum Society.
Published ashttp://dx.doi.org/ 10.1116/1.4875935
Showing items related by title, author, creator and subject.
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition Ozgit, C.; Donmez I.; Alevli, M.; Biyikli, N. (2012)We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ...
Donmez I.; Ozgit-Akgun, C.; Biyikli, N. (2013)Gallium oxide (Ga2O3) thin films were deposited by plasma-enhanced atomic layer deposition (ALD) using trimethylgallium as the gallium precursor and oxygen plasma as the oxidant. A wide ALD temperature window was observed ...
Ozgit, C.; Donmez I.; Alevli, M.; Biyikli, N. (2012)The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH 3) as the ...