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      Effect of post-deposition annealing on the electrical properties of B-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition

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      Author
      Altuntas, H.
      Donmez, I.
      Akgun, C. O.
      Bıyıklı, Necmi
      Date
      2014-08
      Source Title
      Journal of Vacuum Science and Technology. Part A. Vacuum, Surfaces and Films
      Print ISSN
      0734-2101
      Electronic ISSN
      1944-2807
      Publisher
      American Vacuum Society
      Volume
      32
      Issue
      4
      Pages
      41504-6 - 41504-1
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Ga2O3 dielectric thin films were deposited on (111)-oriented p-type silicon wafers by plasma-enhanced atomic layer deposition using trimethylgallium and oxygen plasma. Structural analysis of the Ga 2O3 thin films was carried out using grazing-incidence x-ray diffraction. As-deposited films were amorphous. Upon postdeposition annealing at 700, 800, and 900°C for 30min under N2 ambient, films crystallized into β-form monoclinic structure. Electrical properties of the β-Ga2O3 thin films were then investigated by fabricating and characterizing Al/β-Ga2O3/p-Si metal-oxide-semiconductor capacitors. The effect of postdeposition annealing on the leakage current densities, leakage current conduction mechanisms, dielectric constants, flat-band voltages, reverse breakdown voltages, threshold voltages, and effective oxide charges of the capacitors were presented. The effective oxide charges (Qeff) were calculated from the capacitance-voltage (C-V) curves using the flat-band voltage shift and were found as 2.6×1012, 1.9×1012, and 2.5×10 12 cm-2 for samples annealed at 700, 800, and 900°C, respectively. Effective dielectric constants of the films decreased with increasing annealing temperature. This situation was attributed to the formation of an interfacial SiO2 layer during annealing process. Leakage mechanisms in the regions where current increases gradually with voltage were well fitted by the Schottky emission model for films annealed at 700 and 900°C, and by the Frenkel-Poole emission model for film annealed at 800°C. Leakage current density was found to improve with annealing temperature. β-Ga2O3 thin film annealed at 800°C exhibited the highest reverse breakdown field value. © 2014 American Vacuum Society.
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      http://hdl.handle.net/11693/12790
      Published Version (Please cite this version)
      http://dx.doi.org/ 10.1116/1.4875935
      Collections
      • Department of Physics 2331
      • Institute of Materials Science and Nanotechnology (UNAM) 1841
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