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dc.contributor.authorKayaci, F.en_US
dc.contributor.authorVempati S.en_US
dc.contributor.authorDonmez, I.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorUyar, Tameren_US
dc.date.accessioned2015-07-28T12:03:00Z
dc.date.available2015-07-28T12:03:00Z
dc.date.issued2014-06-09en_US
dc.identifier.issn2040-3364
dc.identifier.urihttp://hdl.handle.net/11693/12785
dc.description.abstractOxygen vacancies (VOs) in ZnO are well-known to enhance photocatalytic activity (PCA) despite various other intrinsic crystal defects. In this study, we aim to elucidate the effect of zinc interstitials (Zn i) and VOs on PCA, which has applied as well as fundamental interest. To achieve this, the major hurdle of fabricating ZnO with controlled defect density requires to be overcome, where it is acknowledged that defect level control in ZnO is significantly difficult. In the present context, we fabricated nanostructures and thoroughly characterized their morphological (SEM, TEM), structural (XRD, TEM), chemical (XPS) and optical (photoluminescence, PL) properties. To fabricate the nanostructures, we adopted atomic layer deposition (ALD), which is a powerful bottom-up approach. However, to control defects, we chose polysulfone electrospun nanofibers as a substrate on which the non-uniform adsorption of ALD precursors is inevitable because of the differences in the hydrophilic nature of the functional groups. For the first 100 cycles, Znis were predominant in ZnO quantum dots (QDs), while the presence of VOs was negligible. As the ALD cycle number increased, VOs were introduced, whereas the density of Zni remained unchanged. We employed PL spectra to identify and quantify the density of each defect for all the samples. PCA was performed on all the samples, and the percent change in the decay constant for each sample was juxtaposed with the relative densities of Znis and VOs. A logical comparison of the relative defect densities of Znis and VOs suggested that the former are less efficient than the latter because of the differences in the intrinsic nature and the physical accessibility of the defects. Other reasons for the efficiency differences were elaborated.en_US
dc.language.isoEnglishen_US
dc.source.titleNanoscaleen_US
dc.relation.isversionofhttps://doi.org/10.1039/c4nr01887gen_US
dc.subjectAtomic layer depositionen_US
dc.subjectDefectsen_US
dc.subjectFunctional groupsen_US
dc.subjectNanostructuresen_US
dc.subjectOxygen vacanciesen_US
dc.subjectPhotocatalysisen_US
dc.subjectZincen_US
dc.subjectZinc oxideen_US
dc.subjectBottom up approachen_US
dc.subjectDecay constantsen_US
dc.subjectElectrospun nanofibersen_US
dc.subjectIntrinsic natureen_US
dc.subjectPhotocatalytic activitiesen_US
dc.subjectRelative densityen_US
dc.subjectZinc interstitialsen_US
dc.subjectZnO quantum dotsen_US
dc.titleRole of zinc interstitials and oxygen vacancies of ZnO in photocatalysis: a bottom-up approach to control the defect densityen_US
dc.typeArticleen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.citation.spage10224en_US
dc.citation.epage10234en_US
dc.citation.volumeNumber6en_US
dc.citation.issueNumber17en_US
dc.identifier.doi10.1039/c4nr01887gen_US
dc.publisherRoyal Society of Chemistryen_US
dc.contributor.bilkentauthorUyar, Tamer
dc.contributor.bilkentauthorBıyıklı, Necmi
buir.contributor.orcidUyar, Tamer|0000-0002-3989-4481en_US


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