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dc.contributor.authorVempati, S.en_US
dc.contributor.authorCelebioglu, A.en_US
dc.contributor.authorUyar, T.en_US
dc.date.accessioned2015-07-28T12:02:58Z
dc.date.available2015-07-28T12:02:58Z
dc.date.issued2014-08-22en_US
dc.identifier.issn2050-7526
dc.identifier.urihttp://hdl.handle.net/11693/12782
dc.description.abstractWe report on electron phonon interactions in bulk layered graphene (GRA) and its oxide (GO) under bias when exposed to 1° or 2° alcohol vapors, where we have focused on the change of Raman intensity of G and D bands as a function of the bias across the device. In addition to the softening of phonons we have observed a systematic variation in the intensity for D and G bands which is directly related to guest molecules and intrinsic surface nature of GRA and GO. Although the guest molecules withdraw electrons from GRA or GO, the intrinsic nature of the host material has caused mutually contrasting behaviour in IV-characteristics, where the conductance of the former decreases while it increases for the latter. The results from IV-spectra and the intensity maps of D and G bands are juxtaposed and the changes are analyzed with respect to surface and functional group interactions. In the context of doping, it is interesting to see that under equilibrium molecular charge transfer (top-gate like), the intensity ratios of 2D and G bands are not constant in contrast to a previous study [Phys. Rev. B., 2009, 80, 165413] in which such a ratio is invariant in the field effect configuration. © the Partner Organisations 2014.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Materials Chemistry Cen_US
dc.relation.isversionofhttp://dx.doi.org/10.1039/C4TC01694Gen_US
dc.subjectMolecular dopingen_US
dc.titleElectron-phonon interaction in bulk layered graphene and its oxide in the presence of alcohols in a device: Equilibrium molecular dopingen_US
dc.typeArticleen_US
dc.departmentInstitute of Materials Science and Nanotechnologyen_US
dc.citation.spage8585en_US
dc.citation.epage8592en_US
dc.citation.volumeNumber2en_US
dc.citation.issueNumber40en_US
dc.instituteInstitute of Materials Science and Nanotechnologyen_US
dc.identifier.doi10.1039/C4TC01694Gen_US
dc.publisherThe Royal Society of Chemistryen_US


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