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dc.contributor.authorEl Atab, B.en_US
dc.contributor.authorCimen, F.en_US
dc.contributor.authorAlkis, S.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorNayfeh, A.en_US
dc.date.accessioned2015-07-28T12:02:52Z
dc.date.available2015-07-28T12:02:52Z
dc.date.issued2014en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/12757
dc.description.abstractA charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage Vt shift (4 V) at low operating voltage (6/-6 V), good retention (>10 yr), and good endurance characteristic (>104 cycles). This memory performance is compared to control devices with graphene nanoplatelets (or ZnO) and a thicker tunnel oxide. These structures showed a reduced Vt shift and retention characteristic. The GNIZ structure allows for scaling down the tunnel oxide thickness along with improving the memory window and retention of data. The larger Vt shift indicates that the ZnO adds available trap states and enhances the emission and retention of charges. The charge emission mechanism in the memory structures with graphene nanoplatelets at an electric field E ¥ 5.57 MV/cm is found to be based on Fowler-Nordheim tunneling. The fabrication of this memory device is compatible with current semiconductor processing, therefore, has great potential in low-cost nano-memory applications. © 2014 AIP Publishing LLC.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4891050en_US
dc.subjectAtomic Layer Depositionen_US
dc.subjectElectric Fieldsen_US
dc.subjectFlash Memoryen_US
dc.subjectGrapheneen_US
dc.subjectThreshold Voltageen_US
dc.subjectZinc Oxideen_US
dc.titleEnhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layeren_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.citation.spage033102-1en_US
dc.citation.epage033102-4en_US
dc.citation.volumeNumber105en_US
dc.citation.issueNumber3en_US
dc.identifier.doi10.1063/1.4891050en_US
dc.publisherAIP Publishingen_US
dc.contributor.bilkentauthorOkyay, Ali Kemal


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