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dc.contributor.authorZhang, Z. H.en_US
dc.contributor.authorLiu, W.en_US
dc.contributor.authorTan, S. T.en_US
dc.contributor.authorJi, Y.en_US
dc.contributor.authorWang, L.en_US
dc.contributor.authorZhu, B.en_US
dc.contributor.authorZhang, Y.en_US
dc.contributor.authorLu, S.en_US
dc.contributor.authorZhang, X.en_US
dc.contributor.authorHasanov, N.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, H. V.en_US
dc.date.accessioned2015/07/28en_US
dc.date.accessioned2015-07-28T12:02:34Z
dc.date.available2015-07-28T12:02:34Z
dc.date.issued2014en_US
dc.identifier.citationZhang, Z. H., Liu, W., Tan, S. T., Ji, Y., Wang, L., Zhu, B., ... & Sun, X. W. (2014). A hole accelerator for InGaN/GaN light-emitting diodes. Applied Physics Letters, 105(15), 153503.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/11693/12679
dc.descriptionCataloged from PDF version of article.en_US
dc.description.abstractThe quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED. (C) 2014 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.source.titleApplied Physics Letters en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4898588en_US
dc.rightsCopyright © 2014 AIP Publishing LLCen_US
dc.subjectEfficiencyen_US
dc.subjectTransporten_US
dc.subjectBarrieren_US
dc.titleA hole accelerator for InGaN/GaN light-emitting diodesen_US
dc.typeResearch Paperen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnologyen_US
dc.citation.spage153503en_US
dc.citation.epage153503en_US
dc.citation.volumeNumber105en_US
dc.citation.issueNumber15en_US
dc.identifier.doi10.1063/1.4898588en_US
dc.publisherAIP Publishingen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US


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