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dc.contributor.authorCaliskan, D.en_US
dc.contributor.authorBütün, B.en_US
dc.contributor.authorÇakır, M. C.en_US
dc.contributor.authorÖzcan, S.en_US
dc.contributor.authorÖzbay, E.en_US
dc.date.accessioned2015-07-28T12:01:35Z
dc.date.available2015-07-28T12:01:35Z
dc.date.issued2014en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/12456
dc.description.abstractZnO thin films are deposited by radio-frequency magnetron sputtering on thermally grown SiO2 on Si substrates. Pt/Au contacts are fabricated by standard photolithography and lift-off in order to form a metal-semiconductor-metal (MSM) photodetector. The dark current of the photodetector is measured as 1 pA at 100V bias, corresponding to 100 pA/cm(2) current density. Spectral photoresponse measurement showed the usual spectral behavior and 0.35 A/W responsivity at a 100V bias. The rise and fall times for the photocurrent are measured as 22 ps and 8 ns, respectively, which are the lowest values to date. Scanning electron microscope image shows high aspect ratio and dense grains indicating high surface area. Low dark current density and high speed response are attributed to high number of recombination centers due to film morphology, deducing from photoluminescence measurements. These results show that as deposited ZnO thin film MSM photodetectors can be used for the applications needed for low light level detection and fast operation. (C) 2014 AIP Publishing LLC.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4899297en_US
dc.subjectThin-filmen_US
dc.subjectUltraviolet Detectorsen_US
dc.subjectFast Photoresponseen_US
dc.titleLow dark current and high speed ZnO metal–semiconductor–metal photodetector on SiO2/Si substrateen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Centeren_US
dc.citation.spage161108-1en_US
dc.citation.epage161108-3en_US
dc.citation.volumeNumber105en_US
dc.citation.issueNumber16en_US
dc.identifier.doi10.1063/1.4899297en_US
dc.publisherAIP Publishingen_US


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