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      Absorption enhancement in InGaN-based photonic crystal-implemented solar cells

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      Author(s)
      Gundogdu, T. F.
      Gokkavas, M.
      Özbay, Ekmel
      Date
      2012-07-26
      Source Title
      Journal of Nanophotonics
      Print ISSN
      1934-2608
      Publisher
      SPIE
      Volume
      6
      Issue
      1
      Pages
      061603-1 - 061603-9
      Language
      English
      Type
      Article
      Item Usage Stats
      237
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      215
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      Abstract
      We investigate the absorption characteristics of InGaN solar cells with high indium (0.8) content and a one-dimensional periodic nano-scale pattern (implemented) in the InGaN layer theoretically. The short-circuit current of our InGaN-based solar cell structure is calculated for different lattice constant, etch depth, and fill factor values. A substantial increase in the absorption (17.5% increase in short-circuit current) is achieved when the photonic crystal pattern is thoroughly optimized. (c) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.JNP.6.061603]
      Keywords
      InGaN
      Solar cell
      Photonic crystal
      Absorption enhancement
      Permalink
      http://hdl.handle.net/11693/12376
      Published Version (Please cite this version)
      http://dx.doi.org/10.1117/1.JNP.6.061603
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Nanotechnology Research Center (NANOTAM) 1179
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