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      Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate

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      Author
      Arslan, E.
      Ozturk, M. K.
      Cakmak, H.
      Demirel, P.
      Ozcelik, S.
      Özbay, Ekmel
      Date
      2013-08-08
      Source Title
      Journal of Materials Science: Materials in Electronics
      Print ISSN
      0957-4522
      Publisher
      Springer
      Volume
      24
      Issue
      11
      Pages
      4471 - 4481
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      The InxGa1-xN epitaxial layers, with indium (x) concentration changes between 0.16 and 1.00 (InN), were grown on GaN template/(0001) Al2O3 substrate by metal organic chemical vapour deposition. The indium content (x), lattice parameters and strain values in the InGaN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10-15) reflection of the GaN and InGaN layers. The characteristics of mosaic structures, such as lateral and vertical coherence lengths, tilt and twist angle and heterogeneous strain and dislocation densities (edge and screw dislocations) of the InGaN epilayers and GaN template layers were investigated by using high-resolution X-ray diffraction (HR-XRD) measurements. With a combination of Williamson-Hall (W-H) measurements and the fitting of twist angles, it was found that the indium content in the InGaN epilayers did not strongly effect the mosaic structures' parameters, lateral and vertical coherence lengths, tilt and twist angle, or heterogeneous strain of the InGaN epilayers.
      Keywords
      X-ray-diffraction
      Epitaxial GaN
      Threading dislocations
      Physical - properties
      Defect structure
      Films
      Diffractometry
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      http://hdl.handle.net/11693/12329
      Published Version (Please cite this version)
      http://dx.doi.org/10.1007/s10854-013-1427-4
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Nanotechnology Research Center (NANOTAM) 1006
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