Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes
Author
Yang, X.
Mutlugun, E.
Zhao, Y.
Gao, Y.
Leck, K. S.
Ma, Y.
Ke, L.
Tan, S. T.
Demir, Hilmi Volkan
Sun, X. W.
Date
2014Source Title
Small
Print ISSN
1613-6810
Publisher
Wiley-VCH Verlag
Volume
10
Issue
2
Pages
246 - 246
Language
English
Type
ArticleItem Usage Stats
136
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273
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Abstract
A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords
Interfacial LayerLight-emitting Diodes
Nanoparticles
Quantum Dots
Solution Processing
Tungsten Oxide