Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes
Leck, K. S.
Tan, S. T.
Demir, H. V.
Sun, X. W.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/12241
A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Yang, X., Mutlugun, E., Zhao, Y., Gao, Y., Leck, K. S., Ma, Y., ... & Sun, X. W. (2014). Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole‐Injection in Quantum Dot Light‐Emitting Diodes. small, 10(2), 247-252.