Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes

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Author
Yang, X.
Mutlugun, E.
Zhao, Y.
Gao, Y.
Leck, K. S.
Ma, Y.
Ke, L.
Tan, S. T.
Demir, H. V.
Sun, X. W.
Date Issued
2014
Journal Title
Small
Publisher
Wiley-VCH Verlag
Language
English
Type
Article
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Citation
Yang, X., Mutlugun, E., Zhao, Y., Gao, Y., Leck, K. S., Ma, Y., ... & Sun, X. W. (2014). Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole‐Injection in Quantum Dot Light‐Emitting Diodes. small, 10(2), 247-252.
Please cite this item using this persistent URL
http://hdl.handle.net/11693/12241
Abstract
A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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http://dx.doi.org/10.1002/smll.201301199
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