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      Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes

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      Author
      Yang, X.
      Mutlugun, E.
      Zhao, Y.
      Gao, Y.
      Leck, K. S.
      Ma, Y.
      Ke, L.
      Tan, S. T.
      Demir, Hilmi Volkan
      Sun, X. W.
      Date
      2014
      Source Title
      Small
      Print ISSN
      1613-6810
      Publisher
      Wiley-VCH Verlag
      Volume
      10
      Issue
      2
      Pages
      246 - 246
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
      Keywords
      Interfacial Layer
      Light-emitting Diodes
      Nanoparticles
      Quantum Dots
      Solution Processing
      Tungsten Oxide
      Permalink
      http://hdl.handle.net/11693/12241
      Published Version (Please cite this version)
      http://dx.doi.org/10.1002/smll.201301199
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
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