On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
Ju, Z. G.
Tan, S. T.
Zhang, Z. H.
Kyaw, Z. B.
Sun, X. W.
Demir, H. V.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/12235
Applied Physics Letters
A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak emission wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694054]
Ju, Z. G., Tan, S. T., Zhang, Z. H., Ji, Y., Kyaw, Z., Dikme, Y., ... & Demir, H. V. (2012). On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer. Applied Physics Letters, 100(12), 123503.