• About
  • Policies
  • What is open access
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

      Thumbnail
      View / Download
      1.6 Mb
      Author(s)
      Ju, Z. G.
      Tan S.T.
      Zhang Z.-H.
      Ji Y.
      Kyaw, Z. B.
      Dikme, Y.
      Sun, X. W.
      Demir, Hilmi Volkan
      Date
      2012-03-20
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      AIP Publishing
      Volume
      100
      Issue
      12
      Pages
      123503-1 - 123503-4
      Language
      English
      Type
      Article
      Item Usage Stats
      221
      views
      246
      downloads
      Abstract
      A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak emission wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells.
      Keywords
      Quantum-wells
      Permalink
      http://hdl.handle.net/11693/12235
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.3694054
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
      Show full item record

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsCoursesThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsCourses

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 2976
      © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy