An Indium-Free Transparent Resistive Switching Random Access Memory
Sun, X. W.
Zhao, J. L.
Yu, H. Y.
Demir, H. V.
Teo, K. L.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/12213
IEEE Electron Device Letters
We report an indium-free transparent resistive switching random access memory device based on GZO-Ga(2)O(3)-ZnO-Ga(2)O(3)-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.
Zheng, K., Sun, X. W., Zhao, J. L., Wang, Y., Yu, H. Y., Demir, H. V., & Teo, K. L. (2011). An indium-free transparent resistive switching random access memory. IEEE Electron Device Letters, 32(6), 797-799.