An Indium-Free Transparent Resistive Switching Random Access Memory

doi:10.1109/LED.2011.2126017

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Author

Zheng, K.

Sun, X. W.

Zhao, J. L.

Wang, Y.

Yu, H. Y.

Demir, H. V.

Teo, K. L.

Date

2011-06

Journal Title

IEEE Electron Device Letters

ISSN

0741-3106

Publisher

IEEE

Volume

Issue

Pages

797 - 797

Language

English

Type

Article

Metadata

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Citation

Zheng, K., Sun, X. W., Zhao, J. L., Wang, Y., Yu, H. Y., Demir, H. V., & Teo, K. L. (2011). An indium-free transparent resistive switching random access memory. IEEE Electron Device Letters, 32(6), 797-799.

Please cite this item using this persistent URL

http://hdl.handle.net/11693/12213

Abstract

We report an indium-free transparent resistive switching random access memory device based on GZO-Ga(2)O(3)-ZnO-Ga(2)O(3)-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.

Published as

http://dx.doi.org/10.1109/LED.2011.2126017