An Indium-Free Transparent Resistive Switching Random Access Memory

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Author
Zheng, K.
Sun, X. W.
Zhao, J. L.
Wang, Y.
Yu, H. Y.
Demir, H. V.
Teo, K. L.
Date Issued
2011-06
Journal Title
IEEE Electron Device Letters
Publisher
IEEE
Language
English
Type
Article
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Citation
Zheng, K., Sun, X. W., Zhao, J. L., Wang, Y., Yu, H. Y., Demir, H. V., & Teo, K. L. (2011). An indium-free transparent resistive switching random access memory. IEEE Electron Device Letters, 32(6), 797-799.
Please cite this item using this persistent URL
http://hdl.handle.net/11693/12213
Abstract
We report an indium-free transparent resistive switching random access memory device based on GZO-Ga(2)O(3)-ZnO-Ga(2)O(3)-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.
Published as
http://dx.doi.org/10.1109/LED.2011.2126017
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