An Indium-Free Transparent Resistive Switching Random Access Memory

doi:10.1109/LED.2011.2126017

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Date Issued

2011-06

Author

Zheng, K.

Sun, X. W.

Zhao, J. L.

Wang, Y.

Yu, H. Y.

Demir, H. V.

Teo, K. L.

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Please cite this item using this persistent URL

http://hdl.handle.net/11693/12213

Journal

IEEE Electron Device Letters

Published as

http://dx.doi.org/10.1109/LED.2011.2126017

Collections

Department of Physics [621]
Department of Electrical and Electronics Engineering [979]
Institute of Materials Science and Nanotechnology [306]

Publisher

IEEE

Abstract

We report an indium-free transparent resistive switching random access memory device based on GZO-Ga(2)O(3)-ZnO-Ga(2)O(3)-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.

Citation

Zheng, K., Sun, X. W., Zhao, J. L., Wang, Y., Yu, H. Y., Demir, H. V., & Teo, K. L. (2011). An indium-free transparent resistive switching random access memory. IEEE Electron Device Letters, 32(6), 797-799.