An Indium-Free Transparent Resistive Switching Random Access Memory
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Date
2011-06Journal Title
IEEE Electron Device Letters
Publisher
IEEE
Language
English
Type
Article
Metadata
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Zheng, K., Sun, X. W., Zhao, J. L., Wang, Y., Yu, H. Y., Demir, H. V., & Teo, K. L. (2011). An indium-free transparent resistive switching random access memory. IEEE Electron Device Letters, 32(6), 797-799.
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http://hdl.handle.net/11693/12213Abstract
We report an indium-free transparent resistive switching random access memory device based on GZO-Ga(2)O(3)-ZnO-Ga(2)O(3)-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.