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dc.contributor.authorWang, Y.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorGoh, G. K. L.en_US
dc.contributor.authorDemir, H. V.en_US
dc.contributor.authorYu, H. Y.en_US
dc.date.accessioned2015-07-28T12:00:35Z
dc.date.available2015-07-28T12:00:35Z
dc.date.issued2010-12-10en_US
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/11693/12207
dc.description.abstractInkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) with bottom-gate bottom-contact device architecture are studied in this paper. The impact of the IGZO film thickness on the performance of TFTs is investigated. The threshold voltage, field-effect mobility, on and off drain current, and subthreshold swing are strongly affected by the thickness of the IGZO film. With the increase in film thickness, the threshold voltage shifted from positive to negative, which is related to the depletion layer formed by the oxygen absorbed on the surface. The field-effect mobility is affected by the film surface roughness, which is thickness dependent. Our results show that there is an optimum IGZO thickness, which ensures the best TFT electrical performance. The best result is from a 55-nm-thick IGZO TFT, which showed a field-effect mobility in the saturation region of 1.41 cm(2)/V . s, a threshold voltage of 1 V, a drain current on/off ratio of approximately 4.3 x 10(7), a subthreshold swing of 384 mV/dec, and an off-current level lower than 1 pA.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Transactions on Electron Devicesen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/TED.2010.2091131en_US
dc.subjectFilm thicknessen_US
dc.subjectIn-ga-zn Oxide (igzo)en_US
dc.subjectInkjet printingen_US
dc.subjectThin-film transistors (tfts)en_US
dc.subjectSemiconductorsen_US
dc.subjectElectronicsen_US
dc.subjectFabricationen_US
dc.subjectPolymeren_US
dc.titleInfluence of channel layer thickness on the electrical performances of inkjet-printed In-Ga-Zn oxide thin-film transistorsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnologyen_US
dc.citation.spage480en_US
dc.citation.epage485en_US
dc.citation.volumeNumber58en_US
dc.citation.issueNumber2en_US
dc.identifier.doi10.1109/TED.2010.2091131en_US
dc.publisherIEEEen_US


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