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      On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes

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      Author(s)
      Zhang Z.-H.
      Tan S.T.
      Ju, Z.
      Liu W.
      Ji Y.
      Kyaw, Z.
      Dikme, Y.
      Sun, X. W.
      Demir, Hilmi Volkan
      Date
      2013
      Source Title
      Journal of Display Technology
      Print ISSN
      1551-319X
      Publisher
      IEEE
      Volume
      9
      Issue
      4
      Pages
      226 - 233
      Language
      English
      Type
      Article
      Item Usage Stats
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      358
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      Abstract
      InGaN/GaN light-emitting diodes (LEDs) make an important class of optoelectronic devices, increasingly used in lighting and displays. Conventional InGaN/GaN LEDs of c-orientation exhibit strong internal polarization fields and suffer from significantly reduced radiative recombination rates. A reduced polarization within the device can improve the optical matrix element, thereby enhancing the optical output power and efficiency. Here, we have demonstrated computationally that the step-doping in the quantum barriers is effective in reducing the polarization-induced fields and lowering the energy barrier for hole transport. Also, we have proven experimentally that such InGaN/GaN LEDs with Si step-doped quantum barriers indeed outperform LEDs with wholly Si-doped barriers and those without doped barriers in terms of output power and external quantum efficiency. The consistency of our numerical simulation and experimental results indicate the effects of Si step-doping in suppressing quantum-confined stark effect and enhancing the hole injection, and is promising in improving the InGaN/GaN LED performance.
      Keywords
      Ingan
      Gan
      Light-emitting Diode (led)
      Quantum-confined Stark Effect (qcse)
      Si-doping
      Efficiency-droop
      Macroscopic Polarization
      Wells
      Strain
      Si
      Heterostructures
      Permalink
      http://hdl.handle.net/11693/12152
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/JDT.2012.2204858
      Collections
      • Department of Electrical and Electronics Engineering 4016
      • Department of Physics 2551
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
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