InGaN/GaN light-emitting diode with a polarization tunnel junction
Zhang, Z. H.
Tan, S. T.
Sun, X. W.
Demir, H. V.
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/12130
Applied Physics Letters
Published ashttp://dx.doi.org/ 10.1063/1.4806978
American Institute of Physics
We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p(+)-GaN/InGaN/n(+)-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs using the conventional p(+)/n(+) tunnel junction, these devices having the polarization tunnel junction show a reduced forward bias, which is attributed to the polarization induced electric fields resulting from the in-plane biaxial compressive strain in the thin InGaN layer sandwiched between the p(+)-GaN and n(+)-GaN layers. (C) 2013 AIP Publishing LLC.
Zhang, Z. H., Tan, S. T., Kyaw, Z., Ji, Y., Liu, W., Ju, Z., ... & Demir, H. V. (2013). InGaN/GaN light-emitting diode with a polarization tunnel junction. Applied Physics Letters, 102(19), 193508.