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dc.contributor.authorYu, H.en_US
dc.contributor.authorOzturk, M.en_US
dc.contributor.authorDemirel, P.en_US
dc.contributor.authorCakmak, H.en_US
dc.contributor.authorBolukbas, B.en_US
dc.contributor.authorCaliskan, D.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T12:00:03Z
dc.date.available2015-07-28T12:00:03Z
dc.date.issued2011en_US
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/12110
dc.description.abstractThe AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition. After optimization, a transistor structure comprising a 7 nm thick nearly lattice-matched Al0.83In0.17 N barrier exhibits a sheet electron density of 2.0 x 10(13) cm(-2) with a high electron mobility of 1540 cm(2) V-1 s(-1). AnAl(0.83)In(0.17)N barrier HEMT device with 1 mu m gate length provides a current density of 1.0 A mm(-1) at V-GS = 0 V and an extrinsic transconductance of 242 mS mm(-1), which are remarkably improved compared to that of a conventional Al0.3Ga0.7N barrier HEMT. To investigate the thermal stability of the HEMT epi-structures, post-growth annealing experiments up to 800 degrees C have been applied to Al0.83In0.17N and Al0.3Ga0.7N barrier heterostructures. As expected, the electrical properties of an Al0.83In0.17N barrier HEMT structure showed less stability than that of an Al0.3Ga0.7N barrier HEMT to the thermal annealing. The structural properties of Al0.83In0.17N/GaN also showed more evidence for decomposition than that of the Al0.3Ga0.7N/GaN structure after 800 degrees C post-annealing.en_US
dc.language.isoEnglishen_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0268-1242/26/8/085010en_US
dc.subjectCarrier-densityen_US
dc.subjectHeterostructuresen_US
dc.subjectInaln/(in)ganen_US
dc.subjectPerformanceen_US
dc.subjectLayersen_US
dc.subjectHemtsen_US
dc.subjectFilmsen_US
dc.titleMetalorganic chemical vapor deposition growth and thermal stability of the AllNN/GaN high electron mobility transistor structureen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.citation.spage085010-1en_US
dc.citation.epage085010-6en_US
dc.citation.volumeNumber26en_US
dc.citation.issueNumber8en_US
dc.identifier.doi10.1088/0268-1242/26/8/085010en_US
dc.publisherIOP Publishingen_US
dc.contributor.bilkentauthorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828en_US


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