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      MOCVD growth and optical properties of non-polar (11-20) a-plane GaN on (10-12) r-plane sapphire substrate

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      Author(s)
      Yu, H.
      Ozturk, M.
      Demirel, P.
      Cakmak, H.
      Özbay, Ekmel
      Date
      2010-11-15
      Source Title
      Journal of Crystal Growth
      Print ISSN
      0022-0248
      Publisher
      Elsevier
      Volume
      312
      Issue
      23
      Pages
      3438 - 3442
      Language
      English
      Type
      Article
      Item Usage Stats
      203
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      192
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      Abstract
      Non-polar a-plane GaN film with crystalline quality and anisotropy improvement is grown by use of high temperature AlN/AlGaN buffer, which is directly deposited on r-plane sapphire by pulse flows. Compared to the a-plane GaN grown on AIN buffer, X-ray rocking curve analysis reveals a remarkable reduction in the full width at half maximum, both on-axis and off-axis. Atomic force microscopy image exhibits a fully coalesced pit-free surface morphology with low root-mean-square roughness (similar to 1.5 nm). Photoluminescence is carried out on the a-plane GaN grown on r-plane sapphire. It is found that, at low temperature, the dominant emission at similar to 3.42 eV is composed of two separate peaks with different characteristics, which provide explanations for the controversial attributions of this peak in previous studies. (C) 2010 Elsevier B.V. All rights reserved.
      Keywords
      Atomic Force Microscopy
      Crystal Structure
      X-ray Diffraction
      Metalorganic Vapor Phase Epitaxy
      Nitrides
      Semiconducting Gallium Compounds
      Permalink
      http://hdl.handle.net/11693/11979
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.jcrysgro.2010.08.052
      Collections
      • Department of Electrical and Electronics Engineering 3863
      • Department of Physics 2485
      • Nanotechnology Research Center (NANOTAM) 1125
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