Nanoscale charging hysteresis measurement by multifrequency electrostatic force spectroscopy, insulating substrates, silicon nanocrystals

Date
2008-03-04
Authors
Bostanci, U.
Abak, M. K.
Aktas, O.
Dana, A.
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
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Publisher
American Institute of Physics
Volume
92
Issue
9
Pages
093108-1 - 093108-3
Language
English
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Abstract

We report a scanning probe technique that can be used to measure charging of localized states on conducting or partially insulating substrates at room temperature under ambient conditions. Electrostatic interactions in the presence of a charged particle between the tip and the sample is monitored by the second order flexural mode, while the fundamental mode is used for stabilizing the tip-sample separation. Cycling the bias voltage between two limits, it is possible to observe hysteresis of the second order mode amplitude due to charging. Results are presented on silicon nitride films containing silicon nanocrystals.

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